Sign In | Join Free | My burrillandco.com
burrillandco.com

Shenzhen ECER Network Technology Co., Ltd.

Verified Supplier

17 Years

Home > Sleeve Connector >

High Diode 2300

Product Categories
Shenzhen ECER Network Technology Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now
    Buy cheap High Diode 2300 from wholesalers
     
    Buy cheap High Diode 2300 from wholesalers
    • Buy cheap High Diode 2300 from wholesalers
    • Buy cheap High Diode 2300 from wholesalers

    High Diode 2300

    Ask Lasest Price
    Delivery Time : 6-13 working days
    Model Number : 2300
    Brand Name : 2300
    • Product Details
    • Company Profile

    High Diode 2300

    Product Overview

    Function: N-Channel MOSFET

    Usage: Load Switch, DC/DC Converter

    Advantages: Trench Technology, Low RDS(ON), Low Gate Charge, ESD Protected

    Brand

    HIGH DIODE SEMICONDUCTOR

    Package Type

    SOT-23

    Certifications

    RoHS Compliant

    Technology

    Trench Technology Power MOSFET

    Technical Specifications

    ParameterSymbolTest ConditionMinTypeMaxUnit
    Drain - Source Breakdown VoltageV(BR)DSSVGS = 0V, ID = 250A20V
    Zero Gate Voltage Drain CurrentIDSSVDS = 20V, VGS = 0V1A
    Gate - Body Leakage CurrentIGSSVGS = 12V, VDS = 0V100nA
    Gate Threshold VoltageVGS(th)VDS = VGS, ID = 250A0.40.71V
    Drain-source On-resistanceRDS(on)VGS = 4.5V, ID = 3A1832m
    Drain-source On-resistanceRDS(on)VGS = 2.5V, ID = 2A2240m
    Drain-source On-resistanceRDS(on)VGS = 1.8V, ID =2A2862m
    Input CapacitanceCissVDS = 10V, f = 1MHz336pF
    Output CapacitanceCossVDS = 10V, f = 1MHz78.4pF
    Reverse Transfer CapacitanceCrssVDS = 10V, f = 1MHz70pF
    Total Gate ChargeQgVDS = 10V, VGS = 4.5V, ID=6A6.48.2nC
    Gate-source ChargeQgsVDS = 10V, VGS = 4.5V, ID=6A1.82.3nC
    Gate-drain ChargeQg dVDS = 10V, VGS = 4.5V, ID=6A1.31.9nC
    Turn-on Delay Timetd(on)VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=610.521ns
    Turn-on Rise TimetrVDS = 10V, VGS = 4.5V, ID = 1A, RGEN=64.59ns
    Turn-off Delay Timetd(off)VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=627.555ns
    Turn-off Fall TimetfVDS = 10V, VGS = 4.5V, ID = 1A, RGEN=64.38.6ns
    Diode Forward VoltageVSDVGS = 0V, IS = 1.7A1.2V

    Absolute Maximum Ratings

    ParameterSymbolValueUnit
    Drain - Source VoltageVDS20V
    Gate - Source VoltageVGS12V
    Continuous Drain CurrentID4.5A
    Pulsed Drain CurrentIDM18A
    Power DissipationPD1.4W
    Thermal Resistance Junction to AmbientRJA89/W
    Junction TemperatureTJ150
    Storage TemperatureTSTG-55~ +150

    Package Outline Dimensions (SOT-23)

    SymbolMin (mm)Max (mm)Min (in)Max (in)
    A0.9001.1500.0350.045
    A10.0000.1000.0000.004
    A20.9001.0500.0350.041
    b0.3000.5000.0120.020
    c0.0800.1500.0030.006
    D2.8003.0000.1100.118
    E1.1501.5000.0450.059
    E12.2502.6500.0890.104
    e1.8002.0000.0710.079
    e10.950 TYP0.037 TYP
    L0.3000.5000.0120.020
    L1
    0808
    Quality High Diode 2300 for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: Shenzhen ECER Network Technology Co., Ltd.
    *Subject:
    *Message:
    Characters Remaining: (0/3000)
     
    Find Similar Products By Category: